標題: Growth of lattice-matched InAlN/GaN on Si (111) substrate for ultraviolet photodiode application
作者: Binh Tinh Tran
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: InAlN;Si;photodiode;lattice-matched
公開日期: 1-Sep-2013
摘要: In this paper, we report on the growth of high quality In (x) Al1-x N/GaN hetero-structures on Si substrate by metal organic chemical vapor deposition with various indium compositions (x = 10.2, 16.2 and 17.6%). The lattice-matched In0.176Al0.838N/GaN structure shows a smooth surface with good crystalline quality. In addition, the ultraviolet photodiode device shows excellent device characteristics with a low leakage current of 0.12 A mu A, and a high spectral response. It has good quantum efficiency of 94 mA/W and 44% at 265 nm which is comparable to that of the InAlN photodiode grown on sapphire substrate.
URI: http://dx.doi.org/10.1007/s13391-013-2254-8
http://hdl.handle.net/11536/22779
ISSN: 1738-8090
DOI: 10.1007/s13391-013-2254-8
期刊: ELECTRONIC MATERIALS LETTERS
Volume: 9
Issue: 5
起始頁: 705
結束頁: 708
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