ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P+ POLYSILICON GATED P-CHANNEL MOSFET

doi:10.1109/55.334659

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	LIN, CY	en_US
dc.contributor.author	CHOU, JW	en_US
dc.contributor.author	HSU, CCH	en_US
dc.contributor.author	PAN, HT	en_US
dc.contributor.author	KO, J	en_US
dc.date.accessioned	2014-12-08T15:03:44Z	-
dc.date.available	2014-12-08T15:03:44Z	-
dc.date.issued	1994-11-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.334659	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2277	-
dc.description.abstract	The boron-penetration-dependent Reverse Short Channel Effect (RSCE) on the threshold voltage is observed for short channel p+ poly-gate PMOSFET's. The RSCE is found to be more significant as the boron penetration becomes more severe. The RSCE is significant in BF2 doped poly-gated MOS devices and is alleviated in buffered poly-gated MOS devices. Fluorine enhanced boron diffusion in the gate oxide during high temperature process is believed to account for the RSCE, which is also confirmed by using a two-dimensional process simulator.	en_US
dc.language.iso	en_US	en_US
dc.title	ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P+ POLYSILICON GATED P-CHANNEL MOSFET	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.334659	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	15	en_US
dc.citation.issue	11	en_US
dc.citation.spage	437	en_US
dc.citation.epage	439	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1994PT32600001	-
dc.citation.woscount	12	-
顯示於類別：	期刊論文

文件中的檔案：

A1994PT32600001.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。