標題: | Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs |
作者: | Jong, FC Huang, TY Chao, TS Lin, HC Wang, MF Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 19-二月-1998 |
摘要: | The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N2O-annealing step to the sacrificial. oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed. |
URI: | http://hdl.handle.net/11536/32789 |
ISSN: | 0013-5194 |
期刊: | ELECTRONICS LETTERS |
Volume: | 34 |
Issue: | 4 |
起始頁: | 404 |
結束頁: | 406 |
顯示於類別: | 期刊論文 |