標題: Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs
作者: Jong, FC
Huang, TY
Chao, TS
Lin, HC
Wang, MF
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 19-Feb-1998
摘要: The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N2O-annealing step to the sacrificial. oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed.
URI: http://hdl.handle.net/11536/32789
ISSN: 0013-5194
期刊: ELECTRONICS LETTERS
Volume: 34
Issue: 4
起始頁: 404
結束頁: 406
Appears in Collections:Articles


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