標題: | Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact |
作者: | Chen, Kun-Ming Chen, Bo-Yuan Chiu, Chia-Sung Huang, Guo-Wei Chen, Chun-Hao Lin, Horng-Chih Huang, Tiao-Yuan Chen, Ming-Yi Yang, Yu-Chi Jaw, Brenda Wang, Kai-Li 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Drain contact;laterally diffused metal-oxide-semiconductor (LDMOS);multifinger layout;resistance;RF transistor |
公開日期: | 1-九月-2013 |
摘要: | In this letter, we proposed a new layout structure for RF laterally diffused metal-oxide-semiconductor (LDMOS) transistors. In a multifinger layout, the drain contact region was designed to be wider than the channel region. The wider drain increases the equivalent drift region width to reduce the drift resistance and suppress the quasi-saturation effect. We found that the wide-drain multifinger LDMOS devices have lower on-resistance, higher cutoff frequency, higher maximum oscillation frequency, and better power performances than the standard multifinger ones. |
URI: | http://dx.doi.org/10.1109/LED.2013.2272937 http://hdl.handle.net/11536/22782 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2013.2272937 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 34 |
Issue: | 9 |
起始頁: | 1085 |
結束頁: | 1087 |
顯示於類別: | 期刊論文 |