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dc.contributor.authorJUNG, TGen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorLIU, CSen_US
dc.contributor.authorCHANG, TCen_US
dc.contributor.authorLIN, HCen_US
dc.contributor.authorTSAI, WCen_US
dc.contributor.authorHUANG, GWen_US
dc.contributor.authorCHEN, LPen_US
dc.date.accessioned2014-12-08T15:03:44Z-
dc.date.available2014-12-08T15:03:44Z-
dc.date.issued1994-10-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.357206en_US
dc.identifier.urihttp://hdl.handle.net/11536/2282-
dc.description.abstractThe unipolar Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition at 550-degrees-C is demonstrated. The dark current density measured at 77 K is (2.5 +/- 0.1) x 10(-7) A/cm2 for the barrier height of 176 +/- 8 meV, at a reverse bias of 1 V. The barrier heights are measured from the activation analysis of the saturation current and compared to the theoretical values. The barrier height decreases as the thickness of the SiGe strained layer exceeds the critical thickness.en_US
dc.language.isoen_USen_US
dc.titleCHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONen_US
dc.typeNoteen_US
dc.identifier.doi10.1063/1.357206en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume76en_US
dc.citation.issue8en_US
dc.citation.spage4921en_US
dc.citation.epage4923en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1994PM73100074-
dc.citation.woscount0-
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