標題: CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURE
作者: LIOU, TS
WANG, TH
CHANG, CY
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-Oct-1994
摘要: Hole mobility in strained Si1-xGex/Si(001) layers is calculated as functions of temperature and doping concentration for various Ge contents using a Monte Carlo technique. In the Monte Carlo simulation, the band structure is computed by using a bond orbital model, which combines the k.p and the tight-binding methods with a strain Hamiltonian. The Fermi-Dirac distribution is employed for heavily doped impurity scattering. The alloy interaction potential of 1.0 eV for the Monte Carlo model is obtained by fitting the measured velocity-field characteristics in strained Si1-xGex alloys. The calculated hole mobilities compare well with experimental results. The strain effect on hole transport is also evaluated.
URI: http://dx.doi.org/10.1063/1.357244
http://hdl.handle.net/11536/2283
ISSN: 0021-8979
DOI: 10.1063/1.357244
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 76
Issue: 8
起始頁: 4749
結束頁: 4752
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