Random Telegraph Signal Noise Arising from Grain Boundary Traps in Nano-scale Poly-Si Nanowire Thin-Film Transistors

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DC Field	Value	Language
dc.contributor.author	Lee, Chen-Ming	en_US
dc.contributor.author	Tsui, Bing-Yue	en_US
dc.date.accessioned	2014-12-08T15:32:43Z	-
dc.date.available	2014-12-08T15:32:43Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-4673-3082-4	en_US
dc.identifier.issn	1524-766X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22858	-
dc.description.abstract	Nano-scale poly-Si thin-film transistor (TFT) is a promising device for the three-dimensional integrated circuits (3D IC) and 3D stacked flash memories. Random telegraph signal noise (RTN) arising from grain boundary traps is identified and a grain-boundary-induced-fluctuation (GBIF) model is proposed for the first time. Amonia plasma treatment can suppress this RTN source effectively.	en_US
dc.language.iso	en_US	en_US
dc.title	Random Telegraph Signal Noise Arising from Grain Boundary Traps in Nano-scale Poly-Si Nanowire Thin-Film Transistors	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000326324800025	-
Appears in Collections:	Conferences Paper