完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee, Chen-Ming | en_US |
dc.contributor.author | Tsui, Bing-Yue | en_US |
dc.date.accessioned | 2014-12-08T15:32:43Z | - |
dc.date.available | 2014-12-08T15:32:43Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.isbn | 978-1-4673-3082-4 | en_US |
dc.identifier.issn | 1524-766X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22858 | - |
dc.description.abstract | Nano-scale poly-Si thin-film transistor (TFT) is a promising device for the three-dimensional integrated circuits (3D IC) and 3D stacked flash memories. Random telegraph signal noise (RTN) arising from grain boundary traps is identified and a grain-boundary-induced-fluctuation (GBIF) model is proposed for the first time. Amonia plasma treatment can suppress this RTN source effectively. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Random Telegraph Signal Noise Arising from Grain Boundary Traps in Nano-scale Poly-Si Nanowire Thin-Film Transistors | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA) | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000326324800025 | - |
顯示於類別: | 會議論文 |