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dc.contributor.authorLiu, Sheng-Hsienen_US
dc.contributor.authorYang, Wen-Luhen_US
dc.contributor.authorLin, Yu-Hsienen_US
dc.contributor.authorWu, Chi-Changen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2014-12-08T15:32:52Z-
dc.date.available2014-12-08T15:32:52Z-
dc.date.issued2013-11-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2280286en_US
dc.identifier.urihttp://hdl.handle.net/11536/22933-
dc.description.abstractA novel ion bombardment (IB) technique is presented to dope a limited Cu source in an SiOx switching layer (SiOx:Cu SL) for nonvolatile memory applications. Compared with other Cu-doping methods, this IB technique has many benefits, including a local-doping effect, room-temperature process, and compatibility with current IC manufacturing technology, besteading the 1T-1R integration. Through transmission electron microscopy and energy dispersive spectrometer analyses, an IB-induced SiOx:Cu SL is confirmed. In contrast with the conventional Cu/SiOx-stacked sample, this IB-induced SiOx:Cu SL exhibits superior performance in terms of lower forming/RESET voltages, higher uniformity of SET/RESET voltages, and more stable high-temperature retention characteristics. Additionally, so far, this IB-induced TaN/SiOx:Cu/TaN device has shown the best switching endurance properties for the general SiOx-based Cu filament resistance random access memory.en_US
dc.language.isoen_USen_US
dc.subjectCu-doped SiOxen_US
dc.subjection bombardment (IB)en_US
dc.subjectlimited Cu sourceen_US
dc.subjectresistance random access memory (ReRAM)en_US
dc.titleNovel Ion Bombardment Technique for Doping Limited Cu Source in SiOx-Based Nonvolatile Switching Layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2280286en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue11en_US
dc.citation.spage1388en_US
dc.citation.epage1390en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000326284100012-
dc.citation.woscount4-
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