UV Enhanced Oxygen Response Resistance Ratio of ZnO Prepared by Thermally Oxidized Zn on Sapphire Substrate

Abstract

ZnO thin film was fabricated by thermally oxidized Zn at 600 degrees C for 1 h. A surface containing nanostructured dumbbell and lines was observed by scanning electron microscope (SEM). The ZnO resistor device was formed after the following Ti/Aumetallization. The device resistance was characterized at different oxygen pressure environment in the dark and under ultraviolet (UV) light illumination coming from the mercury lamp with a short pass filter. The resistance increases with the increase of oxygen pressure. The resistance decreases and response increases with the increase of light intensity. Models considering the barrier height variation caused by the adsorbed oxygen related species were used to explain these results. The UV light illumination technology shows an effective method to enhance the detection response for this ZnO resistor oxygen sensor.