标题: | Probing Long-Range Coulomb Interactions in Nanoscale MOSFETs |
作者: | Chen, Ming-Jer Chang, Li-Ming Wei, Sih-Yun Chen, Wan-Li Yeh, Ting-Hsien Chen, Chuan-Li Liao, Yu-Chiao 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | Device physics;long-range Coulomb;MOSFETs;mobility;plasmons;scaling;scattering;transport |
公开日期: | 1-十二月-2013 |
摘要: | We have recently experimentally probed long-range Coulomb interactions due to plasmons in polysilicon gate of long-channel (1 mu m) MOSFETs. In this letter, we further probe those due to plasmons in the highly doped source and drain. Test vehicles include four more samples from the same manufacturing process but with small channel lengths (down to 33 nm). I-V's of devices are measured at two drain voltages of 0.05 and 1 V, in a temperature range of 292-380 K. Inverse modeling technique is applied to furnish calibrated doping profiles. The inversion layer electron effective mobility is thereby extracted, showing a decreasing trend with decreasing channel length. Such differences reflect more additional scatterers in the shorter devices. Mobility components limited by these additional scatterers are assessed using Matthiessen's rule. From the extracted temperature dependencies, we infer that the strength of source/drain plasmons increases with decreasing channel length. The errors of Matthiessen's rule are adequately dealt with. Corroborative evidence is given as well. |
URI: | http://dx.doi.org/10.1109/LED.2013.2286816 http://hdl.handle.net/11536/23231 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2013.2286816 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 34 |
Issue: | 12 |
起始页: | 1563 |
结束页: | 1565 |
显示于类别: | Articles |
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