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dc.contributor.authorJhu, Jhe-Ciouen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChang, Geng-Weien_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorTsai, Wu-Weien_US
dc.contributor.authorChiang, Wen-Jenen_US
dc.contributor.authorYan, Jing-Yien_US
dc.date.accessioned2014-12-08T15:33:32Z-
dc.date.available2014-12-08T15:33:32Z-
dc.date.issued2013-11-28en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4832327en_US
dc.identifier.urihttp://hdl.handle.net/11536/23251-
dc.description.abstractAn abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N2O plasma treatment. Experimental verification shows that the N2O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N2O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N2O plasma treatment is much lower than that in as-fabricated devices. The N2O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current. (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleReduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4832327en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume114en_US
dc.citation.issue20en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000327697600036-
dc.citation.woscount1-
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