| 標題: | MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION |
| 作者: | WU, CC CHANG, CY CHEN, PA CHEN, HD LIN, KC CHAN, SH 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| 公開日期: | 5-Sep-1994 |
| 摘要: | Bis(cyclopentadienyl) magnesium, CP2Mg, was used as a magnesium dopant in the InGaAlP layers by low-pressure metalorganic chemical vapor deposition. The hazy surface morphology of heavily doped InGaAlP layers is significantly improved by using magnesium dopant instead of the conventional zinc dopant. We demonstrate that the effective doping efficiency of magnesium is two orders of magnitude higher than that of zinc dopant in the heavily doped InGaAlP layer grown at 720-degrees-C. |
| URI: | http://dx.doi.org/10.1063/1.112091 http://hdl.handle.net/11536/2326 |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.112091 |
| 期刊: | APPLIED PHYSICS LETTERS |
| Volume: | 65 |
| Issue: | 10 |
| 起始頁: | 1269 |
| 結束頁: | 1271 |
| Appears in Collections: | Articles |
- Real index-guided InGaAlP red lasers with buried tunnel junctions / Lu, TC;Shieh, HM;Wang, SC
- SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION / WANG, CJ;WU, JW;CHAN, SH;CHANG, CY;SZE, SM
- DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION / WU, CC;LIN, KC;CHAN, SH;FENG, MS;CHANG, CY
- LOW-TEMPERATURE LUMINESCENT PROPERTIES OF DEGENERATE P-TYPE GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION / CHEN, HD;FENG, MS;CHEN, PA;LIN, KC;WU, CC
- SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION / WANG, CJ;WU, JW;CHAN, SH;CHANG, CY;SZE, SM
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