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dc.contributor.authorFang, Hau-Weien_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:33:45Z-
dc.date.available2014-12-08T15:33:45Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.surfcoat.2012.07.067en_US
dc.identifier.urihttp://hdl.handle.net/11536/23324-
dc.description.abstractIndium zinc oxide (IZO) film was directly deposited on an n-type Si substrate by pulsed laser deposition (PLD) to form the IZO/SiOx/n-Si hetero-junction solar cell. Analytical results indicated that the thickness and quality of the thermal SiOx layer plays a prominent role in determining the conversion efficiency of the solar cell. The sample containing an about 1.78-nm-thick SiOx layer exhibits an open-circuit voltage of 035 V, a short-circuit current density of 28.6 mA/cm(2), a fill factor of 34.3%, and an overall conversion efficiency of 3.4% under AM1.5 condition. The effects of the SiOx layer thickness and the associated interface states on the carrier transport are discussed. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectIndium zinc oxideen_US
dc.subjectPulsed laser depositionen_US
dc.subjectHetero-junction structured solar cellsen_US
dc.titleInfluences of SiOx layer thickness on the characteristics of In-Zn-O/SiOx/n-Si hetero-junction structure solar cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.surfcoat.2012.07.067en_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume231en_US
dc.citation.issueen_US
dc.citation.spage214en_US
dc.citation.epage218en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000328094200047-
dc.citation.woscount5-
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