標題: Electrical properties of SiGe nanowire following fluorine/nitrogen plasma treatment
作者: Chang, Kow-Ming
Chen, Chu-Feng
Lai, Chiung-Hui
Kuo, Po-Shen
Chen, Yi-Ming
Chang, Tai-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SiGe;Nanowire;Plasma;Fluorine;Nitrogen
公開日期: 15-Jan-2014
摘要: The improvements to electrical properties of SiGe nanowires by surface plasma treatment were investigated. Various durations of pre-oxidation with fluorine; ambients for post-nitridation plasma treatment, and annealing temperature after plasma treatment, 800-950 degrees C, were applied. Pre-oxidation treatment using fluorine plasma; improved the conductance of SiGe nanowires because the Si-F binding energy created a more stable interface state than bare nanowire on the surface of SiGe. N-2 plasma incorporated more N than does in NH3 plasma, and NH3 has the drawback of introducing electron traps, causing Si-H bonds to break in the subsequent annealing process. Since the reparation of surface defects by plasma treatment is valid, the high post-annealing temperature to reduce defect by re-crystallizing can be reduced. Hence, Ge diffusion at low post-annealing temperature did not reduce the high concentration of Ge at the SiGe nanowire surfaces. (C) 2013 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2013.11.047
http://hdl.handle.net/11536/23374
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2013.11.047
期刊: APPLIED SURFACE SCIENCE
Volume: 289
Issue: 
起始頁: 581
結束頁: 585
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