Evolution of the conductivity type in germania by varying the stoichiometry

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DC 欄位	值	語言
dc.contributor.author	Islamov, D. R.	en_US
dc.contributor.author	Gritsenko, V. A.	en_US
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chin, A.	en_US
dc.date.accessioned	2014-12-08T15:34:04Z	-
dc.date.available	2014-12-08T15:34:04Z	-
dc.date.issued	2013-12-02	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4838297	en_US
dc.identifier.uri	http://hdl.handle.net/11536/23420	-
dc.description.abstract	Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity. (C) 2013 AIP Publishing LLC.	en_US
dc.language.iso	en_US	en_US
dc.title	Evolution of the conductivity type in germania by varying the stoichiometry	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.4838297	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	103	en_US
dc.citation.issue	23	en_US
dc.citation.epage		en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000328634900065	-
dc.citation.woscount	0	-
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