Title: Dislocation Energetics and Pop-Ins in AlN Thin Films by Berkovich Nanoindentation
Authors: Jian, Sheng-Rui
Tseng, Yu-Chin
Teng, I-Ju
Juang, Jenh-Yih
電子物理學系
Department of Electrophysics
Keywords: nanoindentation;pop-ins;AlN thin films;transmission electron microscopy
Issue Date: 1-Sep-2013
Abstract: Nanoindentation-induced multiple pop-ins were observed in the load-displacement curves when the mechanical responses of AlN films grown on c-plane sapphire substrates were investigated by using Berkovich indenters. No evidence of phase transformation is revealed by cross-sectional transmission electron microscopy (XTEM) and selected area diffraction (SAD) analyses. Instead XTEM observations suggest that these "instabilities" resulted from the sudden nucleation of dislocations propagating along the slip systems lying on the {0001} basal planes and the {10 (1) over bar1} pyramidal planes commonly observed in hexagonal compound semiconductors. Based on this scenario, an energetic estimation of dislocation nucleation is made.
URI: http://dx.doi.org/10.3390/ma6094259
http://hdl.handle.net/11536/23554
ISSN: 1996-1944
DOI: 10.3390/ma6094259
Journal: MATERIALS
Volume: 6
Issue: 9
Begin Page: 4259
End Page: 4267
Appears in Collections:Articles


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