Title: Large-Area Synthesis of Highly Crystalline WSe2 Mono layers and Device Applications
Authors: Huang, Jing-Kai
Pu, Jiang
Hsu, Chang-Lung
Chiu, Ming-Hui
Juang, Zhen-Yu
Chang, Yung-Huang
Chang, Wen-Hao
Iwasa, Yoshihiro
Takenobu, Taishi
Li, Lain-Jong
電子物理學系
Department of Electrophysics
Keywords: transition metal dichalcogenides;tungsten diselenides;layered materials;transistors;inverters;two-dimensional materials
Issue Date: 1-Jan-2014
Abstract: The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics, and optoelectronic devices. Recent reports have demonstrated the growth of large-size two-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of a transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large size WSe2 monolayer flakes or thin films can be successfully grown. The top-gated field-effect transistors based on WSe2 monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm(2)/Vs, respectively. These films can be transferred onto arbitrary substrates, which may inspire research efforts to explore their properties and applications. The resistor-loaded inverter based on a WSe2 film, with a gain of similar to 13, further demonstrates its applicability for logic-circuit integrations.
URI: http://dx.doi.org/10.1021/nn405719x
http://hdl.handle.net/11536/23612
ISSN: 1936-0851
DOI: 10.1021/nn405719x
Journal: ACS NANO
Volume: 8
Issue: 1
Begin Page: 923
End Page: 930
Appears in Collections:期刊論文


文件中的檔案:

  1. 000330542900096.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。