A 147 GHz Fully Differential D-Band Amplifier Design in 65 nm CMOS

Abstract

This work presents a 147 GHz D-band fully differential amplifier design in 65 nm CMOS. By using a T-network, composed of three inductors, to replace an on-chip transformer, the proposed impedance transformation network can provide an impedance transformation ratio larger than one. So the passive gain can be acquired to increase the amplifier gain. The measured results show that the amplifier can provide power gain of 7.1 dB at 147 GHz. The power consumption is 104 mW from a 2 V supply voltage.