Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huang, Shih-Hao | en_US |
dc.contributor.author | Chen, Wei-Zen | en_US |
dc.date.accessioned | 2014-12-08T15:34:51Z | - |
dc.date.available | 2014-12-08T15:34:51Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.isbn | 978-1-4799-0277-4978-1-4799-0280-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/23722 | - |
dc.description.abstract | This paper presents a 20-Gb/s monolithically integrated CMOS optical receiver, integrating a photo detector, a transimpedance amplifier, and a post limiting amplifier on a single chip. Incorporating a 2-D meshed spatially-modulated light detector, the optical receiver achieves a record-high speed and is capable of delivering 80-dB Omega conversion gain when driving 50-Omega output loads. Nested-feedback topologies are adopted for transimpedance and post limiting amplifier design to achieve broad-band and high-gain operations without shunt-peaking inductors. Implemented in a generic 40-nm CMOS technology, the chip size is 0.6 x 0.54 mm(2). This receiver core drains 30 mW from 1-V supply. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | OEIC | en_US |
dc.subject | Optical Receiver | en_US |
dc.subject | Photo Detector (PD) | en_US |
dc.subject | Transimpedance Amplifier (TIA) | en_US |
dc.title | A 20-Gb/s Optical Receiver with Integrated Photo Detector in 40-nm CMOS | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | PROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC) | en_US |
dc.citation.spage | 225 | en_US |
dc.citation.epage | 228 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000330857500057 | - |
Appears in Collections: | Conferences Paper |