標題: Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
作者: Chu, Tian-Jian
Tsai, Tsung-Ming
Chang, Ting-Chang
Chang, Kuan-Chang
Zhang, Rui
Chen, Kai-Huang
Chen, Jung-Hui
Young, Tai-Fa
Huang, Jen-Wei
Lou, Jen-Chung
Chen, Min-Chen
Huang, Syuan-Yong
Chen, Hsin-Lu
Syu, Yong-En
Bao, Dinghua
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RRAM;hydrogen;resistive switching;tri-resistive states
公開日期: 1-二月-2014
摘要: In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a resistance transformation phenomenon, producing a tri-resistive device. Unlike a normal RRAM device, a hydrogen plasma-treated device is operated with a reversed voltage polarity, and the direction of hydrogen ion migration results in the chemical bonds breaking and repairing. By changing the voltage polarity and stop voltage, this tri-resistive behavior can be achieved. This particular hydrogen-induced switching behavior suggests a different RRAM switching mechanism and is finally explained by our model.
URI: http://dx.doi.org/10.1109/LED.2013.2295378
http://hdl.handle.net/11536/23808
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2295378
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 2
起始頁: 217
結束頁: 219
顯示於類別:期刊論文


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