SUBMICRON T-SHAPED GATE HEMT FABRICATION USING DEEP-UV LITHOGRAPHY

標題:	SUBMICRON T-SHAPED GATE HEMT FABRICATION USING DEEP-UV LITHOGRAPHY
作者:	CHANG, EY LIN, KC LIU, EH CHANG, CY CHEN, TH CHEN, J 材料科學與工程學系電控工程研究所 Department of Materials Science and Engineering Institute of Electrical and Control Engineering
公開日期:	1-Aug-1994
摘要:	A new combination of low/high/low sensitivity trilayer (PMMA/PMIPK/PMMA) resist system was used for deep UV lithography to fabricate submicron T-shaped gate. Gate length as narrow as 0.2 mum is achieved. The GaAs HEMT's with 0.3 mum T-shaped Ti/Pt/Au gate is fabricated using this technology. The HEMT demonstrated a 0.6 dB noise figure and 13 dB associated gain at 10 GHz. This deep UV lithography process provides a high throughput and low cost alternative to E-beam lithography for submicron T-gate fabrication.
URI:	http://dx.doi.org/10.1109/55.296215 http://hdl.handle.net/11536/2385
ISSN:	0741-3106
DOI:	10.1109/55.296215
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	15
Issue:	8
起始頁:	277
結束頁:	279
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.