標題: MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICON
作者: CHAO, TS
LEE, CL
LEI, TF
電子工程學系及電子研究所
奈米中心
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
公開日期: 1-Aug-1994
摘要: Multiple-angle incident (MAI) ellipsometry is used to study the optical properties of both amorphous silicon and poly-Si after different heat-treatments. At first, the error sensitivity of MAI ellipsometry has been studied and the optimum conditions to achieve the best precision are obtained. The optical constants and thickness of amorphous silicon deposited by LPCVD at 550-degrees-C changed significantly after sample annealing. The optical constants of the amorphous silicon reached the values of single-crystalline silicon after annealing for both the high and low temperature treatments. A thickness shrinking phenomenon is observed when amorphous silicon is transformed to the polycrystalline form. This phenomenon is confirmed by cross-sectional TEM photography. The thickness shrinking ratio is 3.5 to 6.0%.
URI: http://hdl.handle.net/11536/2399
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 141
Issue: 8
起始頁: 2146
結束頁: 2151
Appears in Collections:Articles


Files in This Item:

  1. A1994PA46300035.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.