標題: SHALLOW JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN COSI FILMS AND RAPID THERMAL ANNEALING
作者: JUANG, MH
LIN, CT
CHENG, HC
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-七月-1994
摘要: Effects of rapid thermal annealing (RTA) on the shallow p+n junctions formed by BF2+ implantation into thin CoSi films on Si substrates are discussed, with comparison to the implantation into thin Co films. Excellent junctions can be achieved via conventional furnace annealing (CFA) for both the samples prepared by implanting dopant through metal (ITM) and metal silicides (ITS) films. For the RTA process, however, the junction formation for ITS was hindered, with the diodes made by ITM being much better than those by ITS due to a deeper as-implanted profile. Although the problem of knock-on Co induced by heavy dopant implant present in making n+p junctions by ITM can be largely reduced by using ITS, ITS is inferior for forming p+n junctions by RTA.
URI: http://dx.doi.org/10.1063/1.358420
http://hdl.handle.net/11536/2404
ISSN: 0021-8979
DOI: 10.1063/1.358420
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 76
Issue: 2
起始頁: 1323
結束頁: 1325
顯示於類別:期刊論文