標題: Electrical Investigation and Reliability of 3D Integration Platform using Cu TSVs and Micro-Bumps with Cu/Sn-BCB Hybrid Bonding
作者: Chang, Yao-Jen
Ko, Cheng-Ta
Hsiao, Zhi-Cheng
Chiang, Cheng-Hao
Fu, Huan-Chun
Yu, Tsung-Han
Fan, Cheng-Han
Lo, Wei-Chung
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2013
摘要: In this paper, the wafer-level three-dimensional (3-D) integration scheme using copper TSVs and fine-pitch Cu/Sn-BCB hybrid bonding is designed, fabricated, and completely investigated on electrical characteristics and stability. Key technologies in this 3D integration scheme include high aspect-ratio Cu TSV, fine-pitch Cu/Sn micro-bumps, 250 degrees C low temperature hybrid bonding, wafer thinning and backside RDL formation. The Kelvin and leakage current structures are designed for realization of fundamental electrical properties, and the daisy chain feature is designed for stability evaluation with several reliability tests. All the samples pass the 1000-cycle thermal cycling test, humidity test, and multiple AC current stressing. This scheme shows a significant leakage current improvement after modifying backside process. The stable reliability results and excellent electrical characteristics indicate that the 3D integration scheme has the excellent sealing ability against oxidation and corrosion, and could be potentially applied for future mass production.
URI: http://hdl.handle.net/11536/24159
ISBN: 978-1-4799-0233-0
期刊: 2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)
起始頁: 64
結束頁: 70
Appears in Collections:Conferences Paper