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dc.contributor.authorChien, Yu-Sanen_US
dc.contributor.authorHuang, Yan-Pinen_US
dc.contributor.authorTzeng, Ruoh-Ningen_US
dc.contributor.authorShy, Ming-Shawen_US
dc.contributor.authorLin, Teu-Huaen_US
dc.contributor.authorChen, Kou-Huaen_US
dc.contributor.authorChuang, Ching-Teen_US
dc.contributor.authorHwang, Weien_US
dc.contributor.authorChiou, Jin-Chernen_US
dc.contributor.authorChiu, Chi-Tsungen_US
dc.contributor.authorTong, Ho-Mingen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2014-12-08T15:35:46Z-
dc.date.available2014-12-08T15:35:46Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-0233-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/24162-
dc.description.abstractTwo bonded structures, Cu/In bonding and Cu-Cu bonding with Ti passivation, were investigated for the application of 3D interconnects. For Cu/In bonding, the bonds were achieved at 170 degrees C due to the isothermal solidification. The intermetallic compounds formed in the joint was Cu2In phase. For another case, Cu-Cu bonding with Ti passivation was successfully achieved at 180 degrees C. Application of Ti passivation can protect inner Cu from oxidation; therefore, the required bonding temperature can be decreased. Compared to direct Cu-Cu bonding, Cu/In bonding and Cu-Cu bonding with Ti passivation can be performed at low temperature, which can meet low thermal budget requirement for most devices. Besides, with the good electrical performance and reliability, these two bonded interconnects can be applied for 3D IC interconnects.en_US
dc.language.isoen_USen_US
dc.titleLow Temperature (< 180 degrees C) Wafer-level and Chip-level In-to-Cu and Cu-to-Cu Bonding for 3D Integrationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)en_US
dc.citation.spage1146en_US
dc.citation.epage1152en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000332764900176-
Appears in Collections:Conferences Paper