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dc.contributor.authorLin, Chun-Yuen_US
dc.contributor.authorLi, Yi-Juen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2014-12-08T15:35:49Z-
dc.date.available2014-12-08T15:35:49Z-
dc.date.issued2014-05-01en_US
dc.identifier.issn0925-1030en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10470-014-0282-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/24214-
dc.description.abstractA novel design of high-voltage-tolerant stimulus driver for epileptic seizure suppression with low power design and adaptive loading consideration is proposed in this work. The proposed design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-mu m low-voltage CMOS process can be operated with high supply voltage (VCC) of 5-10 V without using the high-voltage transistors, and the process steps of high-voltage transistors can be reduced. The proposed design can be further integrated for an electronic epilepsy prosthetic system-on-chip.en_US
dc.language.isoen_USen_US
dc.subjectAdaptive loadingen_US
dc.subjectEpileptic seizure suppressionen_US
dc.subjectHigh-voltage toleranceen_US
dc.subjectImplantable deviceen_US
dc.subjectStimulatoren_US
dc.subjectSystem-on-chip (SoC)en_US
dc.titleDesign of high-voltage-tolerant stimulus driver with adaptive loading consideration to suppress epileptic seizure in a 0.18-mu m CMOS processen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s10470-014-0282-4en_US
dc.identifier.journalANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSINGen_US
dc.citation.volume79en_US
dc.citation.issue2en_US
dc.citation.spage219en_US
dc.citation.epage226en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000333611000003-
dc.citation.woscount0-
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