標題: | Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement |
作者: | Ho, Szu-Han Chang, Ting-Chang Lu, Ying-Hsin Chen, Ching-En Tsai, Jyun-Yu Liu, Kuan-Ju Tseng, Tseung-Yuen Cheng, Osbert Huang, Cheng-Tung Lu, Ching-Sen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 17-三月-2014 |
摘要: | This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO2 n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V-t) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V-t shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting HfxZr1-xO2 as gate oxide, can reduce the charge/discharge effect. (C) 2014 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4868532 http://hdl.handle.net/11536/24284 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4868532 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 104 |
Issue: | 11 |
結束頁: | |
顯示於類別: | 期刊論文 |