标题: Optical properties associated with strain relaxations in thick InGaN epitaxial films
作者: Tsai, Wen-Che
Hsu, Chia-He
Fu, Shao-Fu
Lee, Fang-Wei
Chen, Chin-Yu
Chou, Wu-Ching
Chen, Wei-Kuo
Chang, Wen-Hao
电子物理学系
Department of Electrophysics
公开日期: 10-三月-2014
摘要: Structural and optical properties of thick InGaN layers with strain and composition inhomogeneities are investigated. High resolution x-ray diffractions (XRD) and reciprocal space mapping (RSM) along an asymmetric axis reveal that the In composition inhomogeneity is accompanied by strain relaxations during the growth of thick InGaN layers. According to the structural analysis, the commonly observed double photoluminescence (PL) peaks have been confirmed to be associated with the strain relaxation in thick InGaN films. Temperature-dependent PL measurements further indicate that the relaxed phase in InGaN films exhibits better emission efficiency than the strained phase. Recombination dynamics reveal that the carrier localization effect is more pronounced in the relaxed phase due to the compositional pulling effect. The correlations between emission efficiency and localization effect in thick InGaN films are discussed. (C)2014 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.22.00A416
http://hdl.handle.net/11536/24291
ISSN: 1094-4087
DOI: 10.1364/OE.22.00A416
期刊: OPTICS EXPRESS
Volume: 22
Issue: 5
起始页: A416
结束页: A424
显示于类别:Articles


文件中的档案:

  1. 000333579200024.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.