完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHIU, HT | en_US |
dc.contributor.author | HO, WY | en_US |
dc.contributor.author | CHUANG, SH | en_US |
dc.date.accessioned | 2014-12-08T15:03:54Z | - |
dc.date.available | 2014-12-08T15:03:54Z | - |
dc.date.issued | 1994-07-01 | en_US |
dc.identifier.issn | 0884-2914 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2433 | - |
dc.description.abstract | Mo(NBut)2(NHBut)2 is used as a single-source precursor to deposit thin films of cubic phase molybdenum carbonitride, MoC(x)N(y), (x: 0.2-0.55, y: 0.1-0.47), by chemical vapor deposition on silicon substrates. in general, the C/Mo ratios increased from 0.2 to 0.55 and the N/Mo ratios decreased from 0.47 to 0.1 with increasing the temperature of deposition from 773 to 923 K. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon atoms were incorporated through beta-methyl activation of the ligands. | en_US |
dc.language.iso | en_US | en_US |
dc.title | DEPOSITION OF MOLYBDENUM CARBONITRIDE THIN-FILMS FROM MO(NBUT)2(NHBUT)2 | en_US |
dc.type | Note | en_US |
dc.identifier.journal | JOURNAL OF MATERIALS RESEARCH | en_US |
dc.citation.volume | 9 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 1622 | en_US |
dc.citation.epage | 1624 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:A1994NU76000003 | - |
dc.citation.woscount | 6 | - |
顯示於類別: | 期刊論文 |