標題: Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing
作者: Fang, JY
Tsai, MS
Dai, BT
Wu, YS
Feng, MS
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2005
摘要: Pattern effects, resulting from different metal removal rates on various feature designs in copper chemical mechanical polishing (Cu CMP), can be reduced in an abrasive-free slurry formulated with HNO3 and benzotriazole (BTA). In the slurry, non-native Cu-BTA adlayer is formed instead of native metal oxide as surface passivation layer on a Cu surface, and it benefits nonlinear Cu removal rate as function of down force. Moreover, by controlling the down force, the Cu removal rate can be independent of down force resulting in the reduction of pattern effect. (C) 2005 The Electrochemical Society.
URI: http://hdl.handle.net/11536/24370
http://dx.doi.org/10.1149/1.1887188
ISSN: 1099-0062
DOI: 10.1149/1.1887188
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 8
Issue: 5
起始頁: G128
結束頁: G130
顯示於類別:期刊論文