標題: | Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishing |
作者: | Fang, JY Tsai, MS Dai, BT Wu, YS Feng, MS 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2006 |
摘要: | Selective removal of surface passivation on protruded Cu film is a critical factor of Cu planarization. For a stress-free Cu abrasive-free polishing (Cu AFP) process, due to the lack of mechanical abrasion by abrasives, a polishing pad is used instead of abrasives to remove surface passivation during Cu planarization. Thus, the planarization efficiency in Cu AFP relates to the efficiency of surface passivation removed by a pad. Comparing Cu oxides with a non-native Cu-BTA (Cu-Benzotriazole) monolayer used as surface passivation, this study found that an oxide-free Cu surface should be required in Cu AFP. When Cu oxides function as surface passivation in Cu AFP, they are removed with greater difficulty by a pad resulting in low planarization efficiency. Contrary to Cu oxides, high planarization efficiency can be obtained with non-native Cu-BTA as surface passivation in Cu AFP. (c) 2005 The Electrochemical Society. |
URI: | http://hdl.handle.net/11536/12861 http://dx.doi.org/10.1149/1.2128100 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.2128100 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 153 |
Issue: | 1 |
起始頁: | G44 |
結束頁: | G46 |
顯示於類別: | 期刊論文 |