標題: Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishing
作者: Fang, JY
Tsai, MS
Dai, BT
Wu, YS
Feng, MS
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2006
摘要: Selective removal of surface passivation on protruded Cu film is a critical factor of Cu planarization. For a stress-free Cu abrasive-free polishing (Cu AFP) process, due to the lack of mechanical abrasion by abrasives, a polishing pad is used instead of abrasives to remove surface passivation during Cu planarization. Thus, the planarization efficiency in Cu AFP relates to the efficiency of surface passivation removed by a pad. Comparing Cu oxides with a non-native Cu-BTA (Cu-Benzotriazole) monolayer used as surface passivation, this study found that an oxide-free Cu surface should be required in Cu AFP. When Cu oxides function as surface passivation in Cu AFP, they are removed with greater difficulty by a pad resulting in low planarization efficiency. Contrary to Cu oxides, high planarization efficiency can be obtained with non-native Cu-BTA as surface passivation in Cu AFP. (c) 2005 The Electrochemical Society.
URI: http://hdl.handle.net/11536/12861
http://dx.doi.org/10.1149/1.2128100
ISSN: 0013-4651
DOI: 10.1149/1.2128100
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 153
Issue: 1
起始頁: G44
結束頁: G46
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