標題: Inverse Doping Profile of MOSFETs via Geometric Programming
作者: Li, Yiming
Chen, Ying-Chieh
電機工程學系
Department of Electrical and Computer Engineering
公開日期: 2012
摘要: In this study, we optimize one-dimensional doping profiles between the interface of semiconductor and oxide to the substrate in metal-oxide-semiconductor field-effect transistors (MOSFETs). For a set of given current-voltage curves, the problem is modelled as a geometric programming (GP) problem. The MOSFET\'s DC characteristics including the on-and off-state currents are simultaneously derived as functions of the doping profile in the GP problem.
URI: http://hdl.handle.net/11536/24377
http://dx.doi.org/10.1007/978-3-642-22453-9__37
ISBN: 978-3-642-22453-9; 978-3-642-22452-2
DOI: 10.1007/978-3-642-22453-9__37
期刊: SCIENTIFIC COMPUTING IN ELECTRICAL ENGINEERING (SCEE 2010)
Volume: 16
起始頁: 347
結束頁: 355
顯示於類別:會議論文