標題: Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers
作者: Tu, CH
Chang, TC
Liu, PT
Zan, HW
Tai, YH
Feng, LW
Wu, YC
Chang, CY
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 2005
摘要: Polycrystalline silicon thin-film transistors (poly-Si TFTs) with self-aligned fluorine-doped SiO2 (FSG) spacer were investigated in this study. The presence of FSG spacers can effectively reduce the lateral electrical field near the drain side of a poly-Si TFT device, and strongly passivate Si dangling bonds at the grain boundaries. The significant enhancement in electrical performance suppresses serious kink effect and improves electrical reliability of poly-Si TFTs effectively. In addition, the proposed poly-TFT structure is uncomplicated and compatible with existing TFT manufacturing processes. (c) 2005 The Electrochemical Society.
URI: http://hdl.handle.net/11536/24403
http://dx.doi.org/10.1149/1.1945372
ISSN: 1099-0062
DOI: 10.1149/1.1945372
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 8
Issue: 8
起始頁: G209
結束頁: G211
Appears in Collections:Articles