標題: Enhanced performance of poly-Si thin film transistors using fluorine ions implantation
作者: Tu, CH
Chang, TC
Liu, PT
Zan, HW
Tai, YH
Yang, CY
Wu, YC
Liu, HC
Chen, WR
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2005
摘要: Fluorine (F)-implanted polycrystalline silicon thin-film transistor (poly-Si TFT) are proposed for the enhancement of device performance. A significant improvement in electrical characteristics, such as I-ON/I-OFF ratio, and field effect mobility, can be realized in the new thin-film transistor. The field effect mobility for F-implanted poly-Si TFTs is 53.82 cm(2)/V-s, and higher than 19.74 cm(2)/V-s in conventional SPC poly-Si TFTs. Furthermore, the F-implanted poly- Si TFT exhibits high immunity against hot carrier effect and improved electrical reliability. The manufacturing processes are simple and without additional thermal annealing steps, thereby compatible with the conventional TFT fabrication processes. (c) 2005 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/24425
http://dx.doi.org/10.1149/1.1996508
ISSN: 1099-0062
DOI: 10.1149/1.1996508
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 8
Issue: 9
起始頁: G246
結束頁: G248
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