標題: | Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect |
作者: | Zheng, Zhi-Wei Hsu, Hsiao-Hsuan Cheng, Chun-Hu Chen, Po-Chun 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | resistive random access memories;Y2O3;TiOy;carrier depletion;resisitive switching |
公開日期: | 1-五月-2014 |
摘要: | We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 A at 150 degrees C, large off/on resistance window (>200) at 150 degrees C, large rectification ratio of approximate to 300 at 150 degrees C and good current distribution at 85 degrees C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
URI: | http://dx.doi.org/10.1002/pssr.201409039 http://hdl.handle.net/11536/24451 |
ISSN: | 1862-6254 |
DOI: | 10.1002/pssr.201409039 |
期刊: | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS |
Volume: | 8 |
Issue: | 5 |
起始頁: | 431 |
結束頁: | 435 |
顯示於類別: | 期刊論文 |