CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

標題:	CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
作者:	WU, JW CHANG, CY LIN, KC CHAN, SH CHEN, HD CHEN, PA CHANG, EY KUO, MS 材料科學與工程學系電控工程研究所 Department of Materials Science and Engineering Institute of Electrical and Control Engineering
關鍵字:	GAINP;LOW-PRESSURE MOCVD;TMGA;TEGA;TMIN;EDMIN
公開日期:	15-Jun-1994
摘要:	The Ga0.5In0.5P epilayer was grown by low-pressure metalorganic chemical vapor deposition. Trimethylgallium and triethylgallium were used as the gallium source's, while trimethylindium and ethyldimethylindium were used as the indium sources. The use of triethylgallium incorporated with trimethylindium enhanced the growth rate of Ga0.5In0.5P as compared to incorporation with ethyldimethylindium. While the use of trimethylgallium incorporated with ethyldimethylindium enhanced the growth rate of Ga0.5In0.5P significantly, as compared to incorporation with trimethylindium.
URI:	http://dx.doi.org/10.1143/JJAP.33.L832 http://hdl.handle.net/11536/2451
ISSN:	0021-4922
DOI:	10.1143/JJAP.33.L832
期刊:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume:	33
Issue:	6B
起始頁:	L832
結束頁:	L833
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.