The Formation of The Hexagonal Pyramid Facets on Wet Etching Patterned Sapphire Substrate

doi:10.1149/05042.0027ecst

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DC 欄位	值	語言
dc.contributor.author	Chen, Y. C.	en_US
dc.contributor.author	Hsiao, F. C.	en_US
dc.contributor.author	Wu, Y. S.	en_US
dc.date.accessioned	2014-12-08T15:36:12Z	-
dc.date.available	2014-12-08T15:36:12Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-60768-430-5	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://hdl.handle.net/11536/24554	-
dc.identifier.uri	http://dx.doi.org/10.1149/05042.0027ecst	en_US
dc.description.abstract	Currently, the wet etching patterned sapphire substrate (PSS) has attracted much attention for its high production yield. After etching in hot mixed H2SO4 and H3PO4 solution, the several etched facets were exposed on sapphire substrate. In this study, a series of etching process was used to investigate the formation. As shown in Fig. 1, when SiO2 mask still remained, the structure of PSS comprised of six facets {3 (4) over bar 17}. When SiO2 mask were etched away, beside six facets, there were three extra facets {1 (1) over bar 05} exposed on the top.	en_US
dc.language.iso	en_US	en_US
dc.title	The Formation of The Hexagonal Pyramid Facets on Wet Etching Patterned Sapphire Substrate	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/05042.0027ecst	en_US
dc.identifier.journal	MATERIALS FOR SOLID STATE LIGHTING	en_US
dc.citation.volume	50	en_US
dc.citation.issue	42	en_US
dc.citation.spage	27	en_US
dc.citation.epage	31	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000338315700004	-
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