Ultra-Low Switching Power RRAM Using Hopping Conduction Mechanism

doi:10.1149/05004.0003ecst

Full metadata record

DC Field	Value	Language
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chiu, Y. C.	en_US
dc.contributor.author	Zheng, Z. W.	en_US
dc.contributor.author	Liu, M.	en_US
dc.date.accessioned	2014-12-08T15:36:13Z	-
dc.date.available	2014-12-08T15:36:13Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-1-60768-352-0	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://hdl.handle.net/11536/24562	-
dc.identifier.uri	http://dx.doi.org/10.1149/05004.0003ecst	en_US
dc.description.abstract	Very low 0.4 pJ switching energy, fast 50 ns switching time, large > 10(5) retention window at 85 degrees C, and 10(6) cycling endurance were achieved in Ni/GeOx/SrTiOy/TaN RRAM. This RRAM device has negative temperature coefficient (TC) and ruled by bulk hopping conduction mechanism that lead to potentially better distribution. This is in sharp contrast to the positive TC and randomly distributed metallic filament RRAM. Such low switching energy is necessary for large-array NAND memory application, a unique merit of this RRAM device.	en_US
dc.language.iso	en_US	en_US
dc.title	Ultra-Low Switching Power RRAM Using Hopping Conduction Mechanism	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/05004.0003ecst	en_US
dc.identifier.journal	DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10	en_US
dc.citation.volume	50	en_US
dc.citation.issue	4	en_US
dc.citation.spage	3	en_US
dc.citation.epage	8	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000337757800001	-
Appears in Collections:	Conferences Paper