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dc.contributor.authorLai, Chun-Yenen_US
dc.contributor.authorChien, Tzu-Chiaoen_US
dc.contributor.authorLin, Ting-Yien_US
dc.contributor.authorKe, Tengen_US
dc.contributor.authorHsu, Shih-Hanen_US
dc.contributor.authorLee, Yun-Juen_US
dc.contributor.authorSu, Chien-yingen_US
dc.contributor.authorSheu, Jeng-Tzongen_US
dc.contributor.authorYeh, Ping-Hungen_US
dc.date.accessioned2014-12-08T15:36:19Z-
dc.date.available2014-12-08T15:36:19Z-
dc.date.issued2014-06-02en_US
dc.identifier.issn1556-276Xen_US
dc.identifier.urihttp://dx.doi.org/10.1186/1556-276X-9-281en_US
dc.identifier.urihttp://hdl.handle.net/11536/24650-
dc.description.abstractIn this work, we have demonstrated that amorphous ZnO nanobranches (a-ZnO NBs) could spontaneously react from the crystalline ZnO NWs (c-ZnO NWs) at specific humid environment. The spontaneous reaction mechanism and result can be analyzed by humidity controlling and optical microscope (OM)/scanning electron microscope (SEM)/Kelvin probe force microscopy (KPFM)/transmission electron microscopy (TEM) system. We can make the c-ZnO NWs spontaneous reaction happen at different humid environments and suppress the a-ZnO NBs spontaneous reaction by oxygen/hydrogen plasma surface passivation. The hydrogen plasma surface treatment also can improve the UV sensing sensitivity more than twofold. This work provides the mechanism and methods of the a-ZnO NBs spontaneous growth and offers the passivation treatment for strengthening and enhancing ZnO-based nanodevice application in humid environment and UV light detection, respectively.en_US
dc.language.isoen_USen_US
dc.subjectSpontaneous reactionen_US
dc.subjectHumidity reactionen_US
dc.subjecta-ZnOen_US
dc.subjectPlasma passivationen_US
dc.titleIntensify the application of ZnO-based nanodevices in humid environment: O-2/H-2 plasma suppressed the spontaneous reaction of amorphous ZnO nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/1556-276X-9-281en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume9en_US
dc.citation.issueen_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000338225300001-
dc.citation.woscount2-
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