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dc.contributor.authorQuang-Ho Lucen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorTrinh, Hai-Dangen_US
dc.contributor.authorHong-Quan Nguyenen_US
dc.contributor.authorBinh-Tinh Tranen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.date.accessioned2014-12-08T15:36:25Z-
dc.date.available2014-12-08T15:36:25Z-
dc.date.issued2014-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.53.04EF04en_US
dc.identifier.urihttp://hdl.handle.net/11536/24749-
dc.description.abstractThe influence of different annealing processes including post deposition annealing (PDA) and post metallization annealing (PMA) with various temperatures (250-400 degrees C) and ambient [N-2 and forming gas (FG)] on the electrical characteristics of Pt/Al2O3/In0.53Ga0.47As MOSCAPs are systemically studied. Comparing to samples underwent high PDA temperature, the higher leakage current has been observed for all of samples underwent high PMA temperature. This has resulted in the degradation of capacitance-voltage (C-V) behaviors. In conjunction with the current-voltage (J-V) measurement, depth profiling Auger electron spectroscopy (AES) and high-resolution transmission electron microscopy (HRTEM) analyses evidence that the out-diffusion of metal into oxide layer is the main source of leakage current. The noticeable passivation effect on the Al2O3/InGaAs interface has also been confirmed by the samples that underwent PDA process. (C) 2014 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEffect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitorsen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.53.04EF04en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume53en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000338185100080-
dc.citation.woscount0-
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