完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chin, Albert | en_US |
dc.contributor.author | Lin, S. H. | en_US |
dc.contributor.author | Tsai, C. Y. | en_US |
dc.contributor.author | Yeh, F. S. | en_US |
dc.date.accessioned | 2014-12-08T15:36:27Z | - |
dc.date.available | 2014-12-08T15:36:27Z | - |
dc.date.issued | 2009 | en_US |
dc.identifier.isbn | 978-1-60768-093-2; 978-1-56677-743-8 | en_US |
dc.identifier.issn | 1938-5862 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24789 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/1.3206644 | en_US |
dc.description.abstract | The much shallower trap energy in Si3N4 of [poly-Si]-SiO2-Si3N4-SiO2- Si (SONOS) charge-trapping flash (CTF) device than conventional poly-Si floating gate flash is the fundamental challenge for CTF device. We have pioneered the high-trapping layer CTF memory to increase the trapping energy, where the AlGaN has a large conduction band offset to barrier oxide layer close to conventional poly-Si floating gate. Further device performance improvement is achieved using the novel Charge-Trapping-Engineered Flash (CTEF) device with double barriers for carrier confinements and double shallow-/deep-trapping layers for charge storage. Excellent memory device integrities of large extrapolated 10-year retention of 3.8 V at 150 degrees C, 4 logic levels MLC operation, very fast 100 mu s write speed and good 100,000 cycling stress are measured at the same time. These excellent results may allow further down-scaling the flash memory for additional nodes. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Improved Device Characteristics in Charge-Trapping-Engineered Flash Memory Using High-kappa Dielectrics | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1149/1.3206644 | en_US |
dc.identifier.journal | PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 | en_US |
dc.citation.volume | 25 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 447 | en_US |
dc.citation.epage | 455 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000338086300043 | - |
顯示於類別: | 會議論文 |