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dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChiou, Pingen_US
dc.contributor.authorChiu, Yu-Chienen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorZheng, Zhi-Weien_US
dc.date.accessioned2014-12-08T15:36:28Z-
dc.date.available2014-12-08T15:36:28Z-
dc.date.issued2014-09-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2014.05.010en_US
dc.identifier.urihttp://hdl.handle.net/11536/24813-
dc.description.abstractThis paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm(2)/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO2-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO2-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectInGaZnO (IGZO)en_US
dc.subjectThin-film transistor (TFT)en_US
dc.subjectTitanium oxide (TiO2)en_US
dc.titleAmorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltageen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2014.05.010en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume99en_US
dc.citation.issueen_US
dc.citation.spage51en_US
dc.citation.epage54en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000340220500011-
dc.citation.woscount0-
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