标题: | Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage |
作者: | Hsu, Hsiao-Hsuan Cheng, Chun-Hu Chiou, Ping Chiu, Yu-Chien Chang, Chun-Yen Zheng, Zhi-Wei 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | InGaZnO (IGZO);Thin-film transistor (TFT);Titanium oxide (TiO2) |
公开日期: | 1-九月-2014 |
摘要: | This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm(2)/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO2-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO2-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications. (C) 2014 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.sse.2014.05.010 http://hdl.handle.net/11536/24813 |
ISSN: | 0038-1101 |
DOI: | 10.1016/j.sse.2014.05.010 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 99 |
Issue: | |
起始页: | 51 |
结束页: | 54 |
显示于类别: | Articles |
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