ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS

doi:10.1063/1.355706

Full metadata record

DC Field	Value	Language
dc.contributor.author	CHEN, HD	en_US
dc.contributor.author	FENG, MS	en_US
dc.contributor.author	LIN, KC	en_US
dc.contributor.author	CHEN, PA	en_US
dc.contributor.author	WU, CC	en_US
dc.contributor.author	WU, JW	en_US
dc.date.accessioned	2014-12-08T15:03:58Z	-
dc.date.available	2014-12-08T15:03:58Z	-
dc.date.issued	1994-05-15	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.355706	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2488	-
dc.description.abstract	An anomalous mobility enhancement and metallic-type conductivity were observed in heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition. The 77 K mobility was slightly lower than that of 300 K for hole concentration between 1 x 10(18) and 4 x 10(18) cm-3. However, the 77 K mobility was enhanced from p > 4 X 10(18) cm-3, and the 300 K mobility slowly decreased with increasing hole concentration that ranged from 7 X 10(18) to 3 X 10(19) cm -3. As a result, the 77 K mobility was around 50%-60% greater than the 300 K mobility due to the metallic-type conductivity.	en_US
dc.language.iso	en_US	en_US
dc.title	ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS	en_US
dc.type	Note	en_US
dc.identifier.doi	10.1063/1.355706	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	75	en_US
dc.citation.issue	10	en_US
dc.citation.spage	5453	en_US
dc.citation.epage	5455	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1994NN73200097	-
dc.citation.woscount	5	-
Appears in Collections:	Articles