標題: | ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS |
作者: | CHEN, HD FENG, MS LIN, KC CHEN, PA WU, CC WU, JW 材料科學與工程學系 電控工程研究所 Department of Materials Science and Engineering Institute of Electrical and Control Engineering |
公開日期: | 15-May-1994 |
摘要: | An anomalous mobility enhancement and metallic-type conductivity were observed in heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition. The 77 K mobility was slightly lower than that of 300 K for hole concentration between 1 x 10(18) and 4 x 10(18) cm-3. However, the 77 K mobility was enhanced from p > 4 X 10(18) cm-3, and the 300 K mobility slowly decreased with increasing hole concentration that ranged from 7 X 10(18) to 3 X 10(19) cm -3. As a result, the 77 K mobility was around 50%-60% greater than the 300 K mobility due to the metallic-type conductivity. |
URI: | http://dx.doi.org/10.1063/1.355706 http://hdl.handle.net/11536/2488 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.355706 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 75 |
Issue: | 10 |
起始頁: | 5453 |
結束頁: | 5455 |
Appears in Collections: | Articles |