標題: | Fabrication and characteristics of a GaN-based microcavity laser with shallow etched mesa |
作者: | Lai, Ying-Yu Chou, Yu-Hsun Wu, Yu-Sheng Lan, Yu-Pin Lu, Tien-Chang Wang, Shing-Chung 光電工程學系 Department of Photonics |
公開日期: | 1-六月-2014 |
摘要: | In this work, we have developed a simple GaN-based microcavity (MC) with an intracavity shallow etched mesa. The textured GaN-based MC incorporated two high-reflectivity dielectric Bragg mirrors and an InGaN/GaN multiple quantum well with a shallow etched mesa as an optical confined structure. Lasing and transverse optical confinement characteristics have been verified by measuring devices with different mesa diameters. A quality factor (Q) of 2600 and a threshold energy of 30 nJ have been observed in a 10-mu m-diameter device. Such a cavity structure could be implanted into electrically pumped GaN vertical-cavity surface-emitting lasers for supporting efficient transverse confinement. (C) 2014 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/APEX.7.062101 http://hdl.handle.net/11536/24935 |
ISSN: | 1882-0778 |
DOI: | 10.7567/APEX.7.062101 |
期刊: | APPLIED PHYSICS EXPRESS |
Volume: | 7 |
Issue: | 6 |
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顯示於類別: | 期刊論文 |