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dc.contributor.authorHuang, Yu-Jenen_US
dc.contributor.authorZhuang, Wei-Zheen_US
dc.contributor.authorSu, Kuan-Weien_US
dc.contributor.authorChen, Yung-Fuen_US
dc.date.accessioned2014-12-08T15:36:46Z-
dc.date.available2014-12-08T15:36:46Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2014.2336541en_US
dc.identifier.urihttp://hdl.handle.net/11536/25142-
dc.description.abstractWe demonstrate a high-power master oscillator power amplifier with the double-pass configuration based on the specially designed multisegmented Nd:YVO4 crystals. A powerful mathematical technique on the basis of the Fourier eigenfunction expansion method is developed for precisely calculating the temperature distribution inside the gain medium. A seed Nd:YVO4 oscillator under dual-end pumping is subsequently constructed for efficiently emitting the output power of up to 50 W. Moreover, under a total incident pump power of 244 W at 808 nm, as high as 108 W of the output power at 1064 nm is further generated in our developed master oscillator power amplifier system. Theoretical and experimental results clearly reveal that the gain medium with multiple doping concentrations is practically valuable for constructing a high-power end-pumped laser without bringing in significantly thermal effects.en_US
dc.language.isoen_USen_US
dc.subjectDiode-pumped laseren_US
dc.subjecthigh-power laseren_US
dc.subjectmaster oscillator power amplifieren_US
dc.subjectmultisegmented laser crystalen_US
dc.titlePower Scaling in a Diode-End-Pumped Multisegmented Nd:YVO4 Laser With Double-Pass Power Amplificationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2014.2336541en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume21en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000341586900001-
dc.citation.woscount0-
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